Charge Density Analysis of Silicon using Convergent-Beam Electron Diffraction
نویسندگان
چکیده
منابع مشابه
Convergent beam electron diffraction
In convergent-beam electron diffraction (CBED) a highly convergent electron beam is focussed on to a small (~< 50 nm) area of the sample. Instead of the diffraction spots that are obtained in the back focal plane of the objective lens with parallel illumination in conventional selected-area electron diffraction, CBED produces discs of intensity. The point group can be determined uniquely from t...
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The electron density difference map, ∆ρ(r)= ρ(r)Cryst ρ(r)IAM, here defined as the difference between the electron density of a crystal, ρ(r)Cryst, and that of the equivalent independent atom model (IAM), ρ(r)IAM, represents one of the quantum mechanical characteristics central for developing fundamental understanding of materials. Convergent beam electron diffraction (CBED) experiments perform...
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Two recent advances in quantitative convergent beam electron diffraction (CBED) developed at the University of Bristol are described in this paper. The first is a new scanning technique in which the diffracted intensities in the resulting pattern are integrated through the Bragg condition, equivalent to precessing the sample around a stationary beam. Many more reflections are excited than in a ...
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ژورنال
عنوان ژورنال: Materia Japan
سال: 2006
ISSN: 1340-2625,1884-5843
DOI: 10.2320/materia.45.885